Special Issue on Insulating Films on Semiconductors
• 大类 : 工程技术 - 3区
• 小类 : 工程：电子与电气 - 4区
• 小类 : 纳米科技 - 4区
• 小类 : 光学 - 4区
• 小类 : 物理：应用 - 4区
The aim of this special issue is to bring together recent advances in Micro- and Nano-Devices and systems. This issue is ‘open call’. This means that, while mainly including selected papers presented at INFOS 2019, it is also open to other authors.
This conference series focuses on the research, development and manufacturing of materials relevant to present-day and future CMOS technology. Areas of particular interest are:
High-k dielectrics, metal gate materials and SiO2 for future scaling, FinFETs, SOI
Gate stack materials for high mobility substrates (Ge, SiGe, InGaAs, GaN)
Materials for Non-volatile memories; Phase change memories, chalcogenides, GeSbTe,
Material aspects of Resistive memories, spin memories, Flash memories, Neuromorphic computing.